| 摘要 |
PROBLEM TO BE SOLVED: To surely protect a semiconductor element from thermal breakdown, by arranging a heatsensitive element part detecting the state of heat generation of a semiconductor power element, inside a layout pattern of a metal terminal electrode of a semiconductor power element which is stuck on a greater part of one surface of a semiconductor chip. SOLUTION: A heat-sensitive polycrystalline silicon diode 15, is arranged inside a layout pattern of an aluminum electrode 9 (a source S) formed in common with a plurality of power MOS's 13 which is stuck on a greater part of the surface of a semiconductor chip. The aluminum electrode 9 is excellent in thermal conductivity, so that heat generated in the semiconductor chip is made uniform in the chip by the aluminum electrode 9, and quickly transferred to the forming position of the polycrystalline silicon diode 15. As a result, temperature difference in the semiconductor chip is also restrained, so that local element breakdown due to local current concentration or local temperature rise can be restrained. |
