MANUFACTURE OF SEMICONDUCTOR DEVICE AND THE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To form a gate electrode into a strong structure with respect to the channeling of ion implantation, in a semiconductor device in an MOS structure. SOLUTION: A semiconductor material is deposited on a gate insulation film 2 on a semiconductor substrate 1 for forming a gate electrode 3. An amorphous layer 4 is formed on the surface or in the inside of the gate electrode 3. After that, a gate sidewall is formed, an impurity is ion-implanted into the semiconductor substrate 1 with the gate electrode 3 and a sidewall as a mask, thus forming a source/drain. A layer containing 1×10<20> -1×10<22> /cm<3> nitrogen in number is formed as the amorphous layer 4. The layer is used as an impurity deposition suppressing layer for heat treatment and is set as a channeling preventing layer for ion implantation.