WORD-LINE DRIVE CIRCUIT FOR SEMICONDUCTOR MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To remove a noise quickly and to enhance the selection reliability of a word line. SOLUTION: A word-line drive circuit is provided with a subrow decoder which decodes an address signal and with subword-line drive parts 21a, 25a which are connected to the subrow decoder and which contain a first control circuit 50. The first control circuit 50 activates a word line when a first row signal and a first enable signal are input in such a way that both the first row signal and the first enable signal are activated. When the first row signal is made inactive, the first control circuit 50 contains a first noise preventive circuit MN which removes a noise generated in the word line.