| 摘要 |
PROBLEM TO BE SOLVED: To avoid a pattern defect in a photolithographical step of subjecting a WSi film formed by a CVD process to a patterning process. SOLUTION: Formed on a polysilicon film 13 is a WSi film 14 by a CVD process using tungsten hexafluoxide and dichloro-silane as its main materials. In order to moderate an internal stress in the final stage of the film formation, supply of tungsten hexafluoxide is stopped and supply of only dischloro-silane is carried out. Thus as Si-rich WSi film 15 containing a high concentration of chlorine ions is formed on the WSi film 14. Prior to coating a chemically- photosensitized resist, a silicon substrate 11 having these films formed thereon is immersed into an etching solution containing hydrogen peroxide to remove the Si-rich WSi film 15. As a result, generation of ammonium chloride acting to dull an alkaline development acceleration can be suppressed.
|
