| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor layer device of a structure, wherein the device can be manufactured simply technically and at a desirable cost, the conduction of a necessary current is ensured in the device or the conduction is further improved and the current is conducted sideward. SOLUTION: At least one heteroboundary surface layer system is arranged between a current exit surface 1 and a action surface 3, which is formed so that a current acts in a effective area as wide as possible, this heteroboundary surface layer system consists of two semiconductor layers 2.1 and 2.2, which are respectively formed at different materials or are formed in the same mixing ratio or a material to a material and are arranged in parallel with each other, and this system has discontinuity of bands having an enhancement region for a majority barriers, whereby a current is conducted strongly to the sides of a semiconductor layer device in this enhancement region. The conduction of the current can be further enhanced by a plurality of the heteroboundary surface layer systems arranged front of and behind to each other in a pair. |
