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发明名称
MOS-Feldeffekttransistor
摘要
申请公布号
DE69228278(T2)
申请公布日期
1999.08.05
申请号
DE19926028278T
申请日期
1992.08.20
申请人
AT & T CORP., NEW YORK, N.Y., US
发明人
LEE, KWING FAI, RED BANK, NEW JERSEY 07701, US;OURMAZD, ABBAS, COLTS NECK, NEW JERSEY 07722, US;YAN, RAN-HONG, HOLMDEL, NJ 07733-1058, US
分类号
H01L29/78;H01L29/10;H01L29/36;(IPC1-7):H01L29/10
主分类号
H01L29/78
代理机构
代理人
主权项
地址
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