发明名称 |
Compound semiconductor device and method for controlling characteristics of the same |
摘要 |
A compound semiconductor device is formed having a plurality of FETs exhibiting the same electrode ratio of a difference between a surface area of the active region and the combined overlapping surface area of the source and drain ohmic electrodes to the combined overlapping surface area of the source and drain ohmic electrodes. As such, precise control of a threshold voltage of the FETs is achieved. The compound semiconductor device is also formed so as to include a plurality of resistors having the same ratio of a difference between a surface area of the resistivity region and the combined overlapping surface area of the pair electrodes to the combined overlapping surface area of the pair electrodes. In this manner, a resistivity of the resistor is precisely controlled. <IMAGE> |
申请公布号 |
EP0867944(A3) |
申请公布日期 |
1999.08.04 |
申请号 |
EP19980105342 |
申请日期 |
1998.03.24 |
申请人 |
OKI ELECTRIC INDUSTRY CO., LTD. |
发明人 |
YAMAMOTO, NOBUSUKE |
分类号 |
H01L21/338;H01L21/66;H01L23/544;H01L27/088;H01L29/812 |
主分类号 |
H01L21/338 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|