Double implanted laterally diffused MOS device and method thereof,申请号EP19940117497-传众专利搜索

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发明名称	Double implanted laterally diffused MOS device and method thereof
摘要
申请公布号	EP0653795(B1)	申请公布日期	1999.08.04
申请号	EP19940117497	申请日期	1994.11.07
申请人	MOTOROLA, INC.	发明人	MA, GORDON CHAING;PIRASTEHFAR, HASSAN;ADLER, STEVEN J.
分类号	H01L21/336;H01L29/10;H01L29/78;(IPC1-7):H01L29/78;H01L29/08	主分类号	H01L21/336
代理机构		代理人
主权项
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