发明名称 Substrate for forming high-strenght thin semiconductor element and method for manufacturing high-strength thin semiconductor element
摘要 <p>A substrate for forming a high-strength thin semiconductor element includes a thick portion and a thin portion in the front surface or in both front and rear surfaces of the substrate, the thick portion maintaining a thickness of the substrate as initially used or having a thickness that gives a sufficient strength to the substrate, the thin portion being formed by selectively removing a portion of the substrate other than the thick portion and having a thickness smaller than the thick portion and larger than or equal to 20 mu m. <IMAGE></p>
申请公布号 EP0933822(A2) 申请公布日期 1999.08.04
申请号 EP19990300362 申请日期 1999.01.19
申请人 SHARP KABUSHIKI KAISHA 发明人 ANZAWA, OSAMU
分类号 H01L31/02;H01L31/0236;H01L31/0352;H01L31/068;H01L31/18;(IPC1-7):H01L31/068;H01L31/035;H01L31/023 主分类号 H01L31/02
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