| 摘要 |
A method (200) of making a flash memory device without poly stringers includes forming a stacked gate region (202) on a substrate (102) and forming one or more word lines (122a, 122b, 204) in the stacked gate region. The method further includes performing a self-aligned etch (206) in regions adjacent to the one or more word lines (122a, 122b). The self-aligned etch (206) includes etching an insulating layer (110, 206a) with a relatively high insulating layer-to-polysilicon layer selectivity to thereby reduce the height of the resultant insulative fence (126). The self-aligned etch (206) then concludes with etching a polysilicon layer (106a, 106b); due to the reduced insulative fence (126), no poly stringers are formed during the etching of the polysilicon layer (106a, 106b).
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