| 摘要 |
PROBLEM TO BE SOLVED: To provide a device for pulling up a single crystal which can grow the single crystal having low density of grown-in defects called an infrared scatter, a transition cluster, etc. SOLUTION: In the single crystal pulling up device provided with a crucible to be charged with a molten liquid 3, a heater 2 arranged around the crucible, etc., a heat shielding device 10 provided with a ring-shaped main body part 10a for suppressing upward divergence of heat radiation of the pulled-up single crystal 6 near a surface of the molten liquid 3 is disposed. |
