| 发明名称 |
Method of manufacturing bi-layered ferroelectric thin film |
| 摘要 |
A method of forming a Bi-layered ferroelectric thin film on a substrate with good reproducibility, using a mixed composition of a Bi-containing organic compound and a metal polyalkoxide compound by at least one technique selected from the group consisting of molecular deposition such as CVD, and spincoat-sintering.
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| 申请公布号 |
US5932281(A) |
申请公布日期 |
1999.08.03 |
| 申请号 |
US19970854173 |
申请日期 |
1997.05.09 |
| 申请人 |
MATSUSHITA ELECTRONICS CORPORATION;KOJUNDO CHEMICAL LABORATORY CO., LTD.;SYMETRIX CORPORATION |
发明人 |
HOCHIDO YUKOH;KADOKURA, HIDEKIMI;MATSUMOTO, MASAMICHI;ARITA, KOJI;AZUMA, MASAMICHI;OTSUKI, TATSUO |
| 分类号 |
C23C16/40;C23C18/12;H01L21/02;H01L21/314;H01L21/316;(IPC1-7):B05D5/12;B05D3/12;C23C16/00 |
主分类号 |
C23C16/40 |
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