| 摘要 |
A high-breakdown-voltage semiconductor device has a first offset layer and a second offset layer the dosage of which is higher than that of the first offset layer. When the gate is in the ON state, the first offset layer functions as a resurf layer. When the gate is in the OFF state, part of the charge in the first offset layer is neutralized by a drain current flowing through an element having a low ON-resistance, however, the second offset layer functions as a resurf layer. When the drain current is [Acm-1], the amount of charge of electrons is q[C], and the drift speed of carriers is upsilon drift[cms-1], the dosage n2 of the second offset layer is given by n2>/=ID/(q upsilon drift)[cms-2].
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