发明名称 |
RTP booster to semiconductor device anneal |
摘要 |
A method is provided for increasing the electrical activation of dopants in a semiconductor device using rapid thermal processing (RTP). An aspect of the invention includes forming a gate on a semiconductor body (12), such as a substrate (14), and implanting a dopant (28) into the semiconductor body (12) proximate the gate. The dopant (28) is partially activated using a furnace. The dopant (28) is further activated using RTP. The activation of the dopant (28) through RTP in addition to the furnace annealing allows almost complete activation of the dopant while maintaining acceptable channel depths.
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申请公布号 |
US5933740(A) |
申请公布日期 |
1999.08.03 |
申请号 |
US19960644634 |
申请日期 |
1996.04.30 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
CHAPMAN, RICHARD A. |
分类号 |
H01L29/78;H01L21/265;H01L21/336;(IPC1-7):H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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