发明名称 |
Method of forming a field effect transistor |
摘要 |
A semiconductor processing method of forming a field effect transistor includes, a) providing a first layer of material over a substrate; b) providing a first opening through the first layer, the first opening having a width and a base; c) providing a second layer of material over the first layer and to within the first opening to a thickness which is less than one half the first opening width to less than completely fill the first opening and define a narrower second opening; d) anisotropically etching the second layer of material from outwardly of the first layer and from the first opening base to effectively provide inner sidewall spacers within the first opening; e) providing a gate dielectric layer within the second opening; f) providing a layer of electrically conductive gate material over the first layer and to within the second opening over the gate dielectric layer to fill the second opening with conductive gate material; g) without masking, planarize etching the conductive gate material layer substantially selective relative to the first layer to define a transistor gate within the second opening; and h) providing opposing source and drain regions relative to the transistor gate.
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申请公布号 |
US5933738(A) |
申请公布日期 |
1999.08.03 |
申请号 |
US19970964779 |
申请日期 |
1997.11.05 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
KAO, DAVID;LIU, YAUH-CHING |
分类号 |
H01L21/336;H01L29/10;H01L29/78;(IPC1-7):H01L21/339 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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