发明名称 Optical semiconductor component with deep ridged waveguide
摘要 PCT No. PCT/EP97/03584 Sec. 371 Date May 19, 1998 Sec. 102(e) Date May 19, 1998 PCT Filed Jun. 26, 1997 PCT Pub. No. WO98/00738 PCT Pub. Date Jan. 8, 1998For use in digital optical telecommunication systems, optical semiconductor components are shown having a transition region for the expansion of the mode field of a light wave in order to reduce losses when coupling to an optical fiber or an optical waveguide of a supporting plate. An optical semiconductor component contains a deep ridged waveguide (RIDGE) with a cover layer (DS) disposed on a substrate (SUB.) The ridged waveguide (RIDGE) has a first (MQW) and second (BULK) waveguide cores, these being separated by a separating layer (SEP). The thickness of this separating layer increases in a transition region (UB1) along a longitudinal direction (L) of the ridged waveguide (RIDGE), thus increasing the vertical distance between the two waveguide centers (MQW, BULK).
申请公布号 US5933562(A) 申请公布日期 1999.08.03
申请号 US19980029195 申请日期 1998.05.19
申请人 ALCATEL ALSTHOM COMPAGNIE GENERALE D'ELECTRICITE 发明人 DUETTING, KASPAR;KUEHN, EDGAR
分类号 G02B6/30;G02B6/12;G02B6/122;(IPC1-7):G02B6/10 主分类号 G02B6/30
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