发明名称 SUBSTRATE TREATING DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a substrate treating device by which throughput is improved and a defective substrate is not produced. SOLUTION: The substrate treating device 100 for etching the film on a substrate 9 in an etching part 130, a first film thickness measuring part 170a is provided in an inlet part 110 and a second film thickness measuring part 170b in an outlet part 120. The thickness of the film on the substrate 9 before being etched is measured by the first film thickness measuring part 170a and that on the substrate 9 after being etched by the second film thickness measuring part 170b. Consequently, the etching amt. is rapidly obtained for each etching, hence the throughput is increased, and the generation of the defective substrate is minimized.
申请公布号 JPH11209882(A) 申请公布日期 1999.08.03
申请号 JP19980240597 申请日期 1998.08.26
申请人 DAINIPPON SCREEN MFG CO LTD 发明人 MURAOKA YUSUKE;SATO SEIICHIRO
分类号 C23F1/08;G05D5/02;H01L21/02;H01L21/306;H01L21/66;H01L21/677;H01L21/68;(IPC1-7):C23F1/08 主分类号 C23F1/08
代理机构 代理人
主权项
地址