Method of manufacturing a crown shape capacitor

摘要

The present invention is a method of manufacturing crown shape capacitors for use in DRAM semiconductor memory. The method includes the steps of forming a first polysilicon layer, patterning a photoresist on the first polysilicon layer, etching the first polysilicon layer, using oxygen plasma to strip the photoresist, forming a side wall polymer onto the side walls of the first polysilicon layer, using the side wall polymer as a mask to etch back the first polysilicon layer to form a crown shape structure, removing the side wall polymer, depositing a dielectric layer onto the first polysilicon layer, and depositing a second polysilicon layer onto the dielectric layer.