发明名称 Exposure method and lithography system, exposure apparatus and method of producing the apparatus, and method of producing device
摘要 Based on the information about the capability of a first exposure apparatus of correcting the distortion of a first mask transferred a wafer, the image forming characteristics of a second exposure apparatus is adjusted. Therefore, image forming characteristics can be appropriately adjusted (decreasing the correction residual error), considering the distortion of the pattern image of the first mask transferred onto the wafer by the first exposure apparatus. That is, in order to properly transfer the pattern of a second mask onto the wafer by using the second exposure apparatus, the image forming characteristics of the second exposure apparatus are so adjusted that the distortion of the image of the pattern of the second mask is almost the same of that of the first mask. Hence, good image registration is realized.
申请公布号 AU1890699(A) 申请公布日期 1999.08.02
申请号 AU19990018906 申请日期 1999.01.18
申请人 NIKON CORPORATION 发明人 TETSUO TANIGUCHI
分类号 G03F7/20 主分类号 G03F7/20
代理机构 代理人
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