SOI C-MOS MANUFACTURING METHOD,申请号KR19960027607-传众专利搜索

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发明名称	SOI C-MOS MANUFACTURING METHOD
摘要
申请公布号	KR100214492(B1)	申请公布日期	1999.08.02
申请号	KR19960027607	申请日期	1996.07.09
申请人	HYUNDAI MICRO ELECTRONICS CO.,LTD.	发明人	JU, JAE-IL
分类号	H01L21/20;(IPC1-7):H01L21/20	主分类号	H01L21/20
代理机构		代理人
主权项
地址

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