发明名称 |
PROCEDIMENTO PER LA FORMAZIONE DI STRUTTURE DI DIVERSA CONDUTTIVITA' PRESENTANTI UNA REGIONE DI TRANSIZIONE IPERFINA, AI FINI DELLA FORMAZIO |
摘要 |
A process for forming structures with different conductivity showing a hyperfine transition region, for forming porous silicon for semiconductor integrated circuits, in particular provides the forming of PHI /N<+(+)>/N<(-)>-type structures for the subsequent selective anodization of one or more regions of N<+(+)> semiconducting material for forming porous silicon, so as to comprise the steps of: forming one or more regions of N<+(+)> semiconducting material inside a N<(-)> semiconducting material substrate; and growing a PHI semiconducting material epitaxial layer at a temperature lower than 900 DEG C. |
申请公布号 |
ITRM990496(D0) |
申请公布日期 |
1999.08.02 |
申请号 |
IT1999RM00496 |
申请日期 |
1999.08.02 |
申请人 |
SHINE SPA |
发明人 |
BALUCANI MARCO;BONDARENKO VITALY;DOLGYI LEONID;FERRARI ALDO;LAMEDICA GIULIO;YAKOVTSEVA VALENTINA |
分类号 |
H01L21/205;H01L21/22;H01L21/306;H01L21/762 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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