POWER MOSFET AND MANUFACTURING METHOD THEREOF

摘要

The power MOSFET includes a substrate of the power MOS type FET having a source electrode, a part of which corresponds to a source pad area formed directly thereon. The device also includes a bonding wire for connecting the source electrode to the outside. The bonding wire is melt-bonded on the source pad area by an ultra-sonic vibration having a frequency of about 50 to about 70 kHz.