METHOD OF FABRICATING BI-MOS SEMICONDUCTOR MEMORY DEVICE,申请号KR19960028806-传众专利搜索

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发明名称	METHOD OF FABRICATING BI-MOS SEMICONDUCTOR MEMORY DEVICE
摘要
申请公布号	KR100211148(B1)	申请公布日期	1999.08.02
申请号	KR19960028806	申请日期	1996.07.16
申请人	SAMSUNG ELECTRONICS CO., LTD.	发明人	KIM, JIN-HO;LEE, YONG-JAE
分类号	H01L21/328;(IPC1-7):H01L21/328	主分类号	H01L21/328
代理机构		代理人
主权项
地址

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