发明名称 |
Method of eliminating edge effect in chemical vapor deposition of a metal |
摘要 |
A method of eliminating an edge effect in chemical vapor deposition of a metal such as copper on a semiconductor substrate surface. A susceptor in a reaction chamber is exposed to a plasma. A substrate contained thereon and processed by chemical vapor deposition has a uniform metal layer at edge and non-edge surfaces. A plurality of substrates may be processed before reexposing the susceptor to the plasma. |
申请公布号 |
AU1420499(A) |
申请公布日期 |
1999.08.02 |
申请号 |
AU19990014204 |
申请日期 |
1998.11.18 |
申请人 |
TOKYO ELECTRON ARIZONA, INC.;TOKYO ELECTRON LIMITED |
发明人 |
CHANTAL ARENA;RONALD T. BETRAM;EMMANUEL GUIDOTTI |
分类号 |
C23C16/02;C23C16/18;C23C16/44;H01L21/285 |
主分类号 |
C23C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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