| 摘要 |
A method for inspecting process defects occurring in a semiconductor device, which involves forming positive and negative-type etchable layer patterns on a semiconductor wafer by use of positive photoresist film patterns and negative photoresist film patterns respectively formed on adjacent dies, detecting the difference in dimension between corresponding patterns on adjacent dies in a die-to-die comparison manner by a defect inspection device, and compensating for the light exposure mask used in the pattern formation based on the result of the detection, thereby reducing the difference in critical dimension of patterns in each field of the light exposure mask due to the proximity effect, the topology of the wafer, the difference in thickness of thin films on the wafer, and the aberration of the lens as used. The positive-type etchable layer patterns are arranged on every second die of the semiconductor wafer whereas the negative-type etchable layer patterns are arranged on dies of the semiconductor wafer respectively adjacent to the dies on which the positive-type etchable layer patterns are arranged. |
