Verfahren zur Ätzung eines halbleitenden Substrats,申请号DE1994619186-传众专利搜索

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发明名称	Verfahren zur Ätzung eines halbleitenden Substrats
摘要
申请公布号	DE69419186(D1)	申请公布日期	1999.07.29
申请号	DE1994619186	申请日期	1994.01.05
申请人	MATSUSHITA ELECTRONICS CORP., TAKATSUKI, OSAKA, JP	发明人	NAKANISHI, HIDEYUKI, 4-A SUNLIVE-MANSION, UKYO-KU, KYOTO-SHI, KYOTO 615, JP;UENO, AKIRA, KATANO-SHI, OSAKA 576, JP;NAGAI, HIDEO, TAKATSUKI-SHI, OSAKA 569, JP;YOSHIKAWA, AKIO, IBARAKI-SHI, OSAKA 567, JP
分类号	H01L21/306;H01L21/308;(IPC1-7):H01L21/308	主分类号	H01L21/306
代理机构		代理人
主权项
地址

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