A SEMICONDUCTOR DEVICE OF SiC AND A TRANSISTOR OF SiC HAVING AN INSULATED GATE
摘要
A semiconductor device of SiC is adapted to hold high voltages in the blocking state thereof. The device comprises two parts (1, 2) each comprising one or more semiconductor layers of SiC and connected in series between two opposite terminals of the device, namely a sub-semiconductor device (1) able to withstand only low voltages in the blocking state thereof and a voltage-limiting part (2) able to withstand high voltages in the blocking state of the device and adapted to protect said sub-semiconductor device by taking a major part of the voltage over the device in the blocking state thereof.
申请公布号
WO9926296(A3)
申请公布日期
1999.07.29
申请号
WO1998SE02048
申请日期
1998.11.13
申请人
ABB RESEARCH LTD.;BIJLENGA, BO;ZDANSKY, LENNART;HARRIS, CHRISTOPHER;BAKOWSKI, MIETEK;KONSTANTINOV, ANDREY;GUSTAFSSON, ULF