Halbleiteranordnung mit einer MOS-Gate-Struktur und einem Oberflächenschutzfilm und Verfahren zur Herstellung

摘要

There is disclosed a semiconductor device having an MOS gate for reducing variations in threshold voltage (Vth) with time wherein a surface protective film is not formed in a device area including channels but only in a device peripheral area, thereby reducing the amount of hydrogen atoms migrating to a silicon-silicon oxide interface in a cell area and, accordingly, reducing the number of Si-H chemical bonds at the interface.