A LDMOS transistor (10) having a reduced surface drain (RSD) region (15), but otherwise similar to a conventional planar LDMOS transistor. The RSD region (15) is used to space the drain region (17) from the gate (14). It is formed after the polysilicon process used to form gate (14) (FIGURE 5), and is therefore self-aligning with respect to the gate (14). The process used to form the transistor (10) is compatible with the process used for existing planar LDMOS devices. <IMAGE> <IMAGE>
申请公布号
EP0880183(A3)
申请公布日期
1999.07.28
申请号
EP19980201648
申请日期
1998.05.14
申请人
TEXAS INSTRUMENTS INCORPORATED
发明人
TSAI, CHIN-YU;EFLAND, TAYLOR RICE;ERDELJAC, JOHN P.;MITROS, JOZEF C.;HUTTER, LOUIS NICHOLAS