This invention provides a memory card device using an EEPROM (16) as a semiconductor memory. When a data write-in defective area is detected in the storage area of the EEPROM (16), a space area is retrieved from the storage area of the EEPROM (16) as a relieving area and data to be written into the data write-in defective area is written into the relieving area. Then, when the relieving area becomes full and a data write-in defective area is detected in the storage area of the EEPROM (16), another space area is retrieved from the storage area of the EEPROM (16) as a new relieving area and data to be written into the data write-in defective area is written into the new relieving area. <IMAGE>