| 摘要 |
In the manufacture of a large-area electronic device, thin-film circuit elements such as TFTs are formed with separate islands (1a,1b) of a crystallized semiconductor film (1) on a device substrate (100,101). The method includes directing an energy beam (50) towards a grid (30) of masking stripes (32) and apertures (31) formed on the semiconductor film (1), to heat the semiconductor film (1) so as to crystallize it both at the apertures (31) and under the masking stripes (32). The masking stripes (32) are located over areas of the semiconductor film (1) where channel regions (11) of the TFT are to be formed. Each aperture (31) between the masking stripes (32) has a width (S1) of less than the wavelength ( lambda ) of the energy beam (50) of step (c). The length of the channel region (11) below each masking stripe (32) is crystallized by diffraction of the energy beam (50) at the apertures as well as by thermal diffusion from the areas heated by the energy beam (50). The method also includes implanting dopant ions (40) in the semiconductor film (1) at the apertures (31) while using the masking stripes (32) to mask underlying areas against implantation, thereby providing a dopant concentration for source and drain regions (12) and (13) and intermediate conductive regions (14) of the TFT. At least part of the grid (30) of masking stripes (32) on the insulating film 2 is retained as an insulated gate structure of the TFT. Such a method simplifies the manufacturing process by combining steps for crystallizing the semiconductor film (1) and for forming the TFT structure, and the crystallizing process is rendered more efficient by appropriate choice of the material and dimensions of the grid (30), its apertures (31) and masking stripes (32).
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