发明名称 |
Resistance to gate dielectric breakdown at the edges of shallow trench isolation structures |
摘要 |
A semiconductor process in which at least one isolation structure is formed in a semiconductor substrate. An oxygen bearing species is introduced into portions of the semiconductor substrate proximal to the isolation structure. A gate dielectric layer is then formed on an upper surface of the semiconductor substrate. The presence of the oxygen bearing species in the proximal portions of the semiconductor substrate increases the oxidation rate of the portions relative to the oxidation rate of portions of the substrate that are distal to the isolation structures. In this manner, the first thickness of the gate dielectric over the proximal portions of the semiconductor substrate is greater than a second thickness of the gate oxide layer over remaining portions of the semiconductor substrate. The increased oxide thickness adjacent to the discontinuities of the isolation trench reduces the electric field across the oxide.
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申请公布号 |
US5930620(A) |
申请公布日期 |
1999.07.27 |
申请号 |
US19970928619 |
申请日期 |
1997.09.12 |
申请人 |
ADVANCED MICRO DEVICES |
发明人 |
WRISTERS, DERRICK J.;GARDNER, MARK I.;FULFORD, H. JIM |
分类号 |
H01L21/762;H01L29/423;(IPC1-7):H01L21/824;H01L21/76;H01L21/265;H01L21/31;H01L21/469 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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