Optical semiconductor device having a semiconductor laminate mirror

摘要

A surface emission semiconductor laser device has a semiconductor laminate mirror constituted of a plurality of pairs of InGaAS/InAlP films epitaxially grown on a GaAs or InGaAs substrate and a laser element bonded to the laminate mirror. The InAlP films of the laminate mirror are lattice-matched or not lattice-matched due to the amount of Al in the InAlP films. The laminate mirror has a high relative refractive index between the InGaAs and InAlP films and thus has a high reflectance to thereby improve the emission efficiency of the surface emission laser device.