发明名称 |
Method of fabricating a microwave inductor |
摘要 |
Isolation regions are formed on a top surface of a wafer. An ion implantation is performed to implant ions into the wafer. Then, an thermal anneal process is used to form an implanted layer on the wafer. Then, a silicon dioxide or silicon nitride layer is deposited on the implanted layer. Next, a micro inductor is patterned on the insulator layer. Subsequently, a dielectric layer is formed on the inductor for isolation. Next, via holes are created by etching the dielectric layer. A conductive layer is patterned on the dielectric layer and refilled into the via holes. Next, a passivation layer is deposited on the dielectric layer and the conductive layer. An etching is performed to etch the wafer from a bottom surface (a second surface) of the wafer. Finally, a ground plate is connected to the bottom surface (second surface) of the wafer.
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申请公布号 |
US5930637(A) |
申请公布日期 |
1999.07.27 |
申请号 |
US19970961696 |
申请日期 |
1997.10.31 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHUANG, KUEN-JOUNG;LUI, HON-SUNG;LIAW, WEN-RUEY |
分类号 |
H01F17/00;H01L21/02;H01L27/08;(IPC1-7):H01L21/465 |
主分类号 |
H01F17/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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