| 摘要 |
PROBLEM TO BE SOLVED: To treat waste gas contg. org. and inorg. group V compds. discharged from a process for producing a thin film of a group III-V compd. semiconductor. SOLUTION: Basic copper carbonate and vanadium pentoxide are mixed with anatase type fine particulate titanium dioxide to prepare the objective waste gas treating agent. Org. group V compds. are converted into inorg. group V compds. by oxidation decomposition with the vanadium pentoxide and the inorg. group V compds. are removed and treated by chemical reaction with the basic copper carbonate. The anatase type fine particulate titanium dioxide carries the vanadium pentoxide and imparts macropores to the treating agent itself to increase removing capacity as well as to accelerate the chemical reaction. |
