| 摘要 |
A method for fabricating an integrated field emission device (90) includes the steps of: (1) providing a substrate (52), (2) forming a conductive layer (54) on the substrate (52), (3) depositing a dielectric layer (56) on the conductive layer (54), (4) forming an emission well (62) in the dielectric layer (56), (5) forming an emissive film (72) over the dielectric layer (56) so that the emissive film (72) extends partially into the emission well (62) to define an emissive edge (94) within the emission well (62), and (6) selectively etching the dielectric layer (56) proximate to the emissive edge (94) so that electrons emitted by the emissive edge (94) are received by the conductive layer (54).
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