Monocrystalline silicon wafer and method of thermally oxidizing a surface thereof

摘要

A monocrystalline silicon wafer is improved so as not to cause enhanced oxidation at the time of forming a gate oxide film. The monocrystalline silicon wafer includes a monocrystalline silicon substrate. The monocrystalline silicon substrate has potassium concentration of at most 2x1011 atoms/cm2 at an outer surface thereof.