发明名称 |
DEVICE FOR GROWING OF SINGLE CRYSTALS |
摘要 |
FIELD: devices for growing of single crystals from melts/solution-melts. SUBSTANCE: single crystals are grown on rotating seed with concurrent rotation of crucible with creation of temperature gradient in zone of crystal growing, and direct and active formation of convection structure in entire volume of melt/solution-melt. Forced convection of melt/solution-melt is formed in zone of crystal growing by installation coaxially to crucible of forming member - mixer made in the form of joined cylinder - forming member and multipaddle mixer. Forming member-mixer is made for displacement inside crucible up to immersion of paddle mixer and one part of cylinder into melt/solution-melt. Use of this device allows growing of crystals with length exceeding 20 mm without signs of cellular growing. EFFECT: higher efficiency. 2 dwg
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申请公布号 |
RU2133786(C1) |
申请公布日期 |
1999.07.27 |
申请号 |
RU19970111347 |
申请日期 |
1997.07.02 |
申请人 |
INSTITUT MINERALOGII I PETROGRAFII SO RAN |
发明人 |
KOKH A.E. |
分类号 |
C30B15/20;(IPC1-7):C30B15/20 |
主分类号 |
C30B15/20 |
代理机构 |
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主权项 |
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