| 摘要 |
A process simulator comprising a triangular mesh generating unit for generating a triangular mesh to a semiconductor device to be processed, a control volume defining unit for defining a control volume on the triangular mesh, an impurity concentration setting unit for setting up the concentration of impurity with respect to the control volume, an oxidation calculating unit for calculating an oxidation process and deforming the triangular mesh, a control volume deforming unit for deforming the control volume, an impurity concentration modifying unit for modifying the impurity concentration according to the deformed control volume, an impurity concentration transferring unit for transferring the modified impurity concentration to the control volume defined on the triangular mesh newly generated to the deformed semiconductor device, and a diffusion calculating unit for performing a diffusion calculation.
|
