发明名称 ELECTROCHEMICAL TREATMENT PROCESS FOR SEMICONDUCTOR PLATES
摘要 FIELD: electronic engineering. SUBSTANCE: process involves fixation of plates on anode, arrangement of anode in electrochemical cell in parallel with electrolyte surface, axial rotation of cylindrical electrode-cathode; novelty is that axis of revolution is shifted in plane parallel to surface of plate under treatment; cylindrical electrode surface is made of alternating sections of conductor and insulator. Insulator sections are made in the form of ridges on cylindrical surface arranged along helical line; in the course of electrode displacement, insulator sections come in contact with plate surface and cause its elastic deformation. EFFECT: improved uniformity of structure and properties of porous silicon resulting in increased yield. 5 cl, 1 tbl
申请公布号 RU2133997(C1) 申请公布日期 1999.07.27
申请号 RU19970120171 申请日期 1997.12.03
申请人 NAUCHNO-ISSLEDOVATEL'SKIJ INSTITUT IZMERITEL'NYKH;NI SKIJ I IZMERITEL NYKH 发明人 SKUPOV V.D.;SMOLIN V.K.
分类号 H01L21/3063;(IPC1-7):H01L21/306 主分类号 H01L21/3063
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