| 摘要 |
PROBLEM TO BE SOLVED: To provide a low cost photosemiconduclor device and its method of manufacturing the same capable of realizing a high-power light emitting device and a low-loss passive waveguide path at low cost. SOLUTION: The carrier concentration of the first p-type InP embedding layer 5 which embeds a mesa-structure active layer 3 and p-type InP clad layer 4, formed on a n-type InP substrate 1, is set larger than that of the second p-type InP embedding layer 6, and a built-in voltage of a pn junction formed by the first p-type InP embedding layer 5 and an n-type InP substrate 1 is set higher, and, at the same time, the waveguide light in the waveguide area is exuded into the second p-type InP embedding layer 6, and resultingly the low-cost and high-power light emitting device and the low-loss passive waveguide are realized. |
