发明名称 |
Photomask controlling transmissivity by using an impurity-containing film formed on a transparent substrate |
摘要 |
The present invention provides a photomask for forming excellent photoresist patterns without the decrease of a critical area and the bulk effect caused by the topology of a photoresist on formed a wafer, by making the mask have different transmissivity in accordance with the topology of a wafer surface. In forming first contact holes and second contact holes in photoresist film formed on a wafer, wherein the first contact holes are deeper than the second contact holes, the photomask comprises a transparent substrate, transmissivity controlling films positioned over areas in which the second contact holes are formed, and light blocking patterns. The impurities control transmissivity, by absorbing light.
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申请公布号 |
US5928814(A) |
申请公布日期 |
1999.07.27 |
申请号 |
US19970819560 |
申请日期 |
1997.03.14 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
YANG, SEONG WOO;GIL, MYUNG GOON |
分类号 |
G03F1/14;(IPC1-7):G03F9/00 |
主分类号 |
G03F1/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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