| 摘要 |
A method of making a semiconductor device, comprises the steps of providing an insulating layer, forming a series of holes in the insulating layer, depositing a first layer of a metal, or a compound thereof, on the insulating layer such and in the holes, f orming a dielectric layer on the first layer, the dielectric consisting of a compound of the metal, and forming a second layer of the metal, or a compound thereof, on the dielectric la yer. The first, second and dielectric layers form a conformal capacitive sandwich structu re extending into the holes.
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