| 摘要 |
Based on the information about the capability of a first exposure device (20A or 20B) of correcting the distortion of the image of a first mask transferred onto a wafer (W), the image forming characteristics of a second exposure apparatus (20B or 20A) are adjusted. Therefore, image forming characteristics can be appropriately adjusted (decreasing the correction residual error), considering the distortion of the pattern image of the first mask transferred onto the wafer by the first exposure apparatus. That is, in order to properly transfer the pattern of a second mask onto the wafer by using the second exposure apparatus, the image forming characteristics of the second exposure apparatus are so adjusted that the distortion of the image of the pattern of the second mask is almost the same of that of the first mask. Hence, good image registration is realized.
|
