| 摘要 |
A method of etching a platinum electrode layer disposed on a substrate to produce a semiconductor device including a plurality of electrodes separated by a distance equal to or less than about 0.3 mu m and having a platinum profile equal to or greater than about 85 DEG . The method comprises heating the substrate to a temperature greater than about 150 DEG C, and etching the platinum electrode layer by employing a high density inductively coupled plasma of an etchant gas comprising chlorine, argon and optionally a gas selected from the group consisting of BC13, HBr, and mixtures thereof. A semiconductor device having a substrate and a plurality of platinum electrodes supported by the substrate. The platinum electrodes have a dimension (e.g., a width) which includes a value equal to or less than about 0.3 mu m and a platinum profile equal to or greater than about 85 DEG .
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