| 摘要 |
SOI-IGBT with a first conductive type channel area (13), at least one second conductive type cell area (10) and at least one first conductive type intermediate area (15) defining the IGBT. The channel area (13), cell area (10) and intermediate area (15) are arranged in an insulating layer (5) on a first conductive type semi-conductor body (1). The channel area (13), cell area (10) and intermediate area (15) are connected to the semiconductor body (1) by means of recesses (6, 7, 8) in the insulating layer (5). |
