| 摘要 |
<p>Nanoporous silica dielectric films are modified by electron beam exposure after an optional hydrophobic treatment by an organic reactant. After formation of the film onto a substrate, the substrate is placed inside a large area electron beam exposure system. The resulting films are characterized by having a low dielectric constant and low water or silanol content compared to thermally cured films. Also, e-beam cured films have higher mechanical strength and better resistance to chemical solvents and oxygen plasmas compared to thermally cured films.</p> |
