| 摘要 |
<p>A thin film of disordered GaN (d-GaN) is manufactured by using an ion implantation process to combine atoms of Ga and N in a layer made from an amorphous material. In one implementation, gallium ions are implanted in a layer made from hydrogenated amorphous silicon nitride (a-SiN:H). In another implementation, gallium ions, nitrogen ions and hydrogen ions are co-implanted in a layer made from an amorphous material which contains no nitrogen, such as amorphous silicon or a plastic material. In general, an ion implantation process can be used to manufacture a thin film of disordered RN where R is at least one metal selected from Ga, Al and In.</p> |
