IMAGING APPARATUS

摘要

An imaging apparatus comprising an electron-bombardment multiplier which is provided with a built-in charge-transfer solid-state imaging device having a high resolution, a high sensitivity, an improved S/N ratio, and a prolonged life time, wherein as an imaging element, an electron-bombardment multiplier is used which includes a vacuum enclosure made up of an input surface plate (12), a ceramic side tube (16), and a ceramic stem (17) and containing a photocathode (13) capable of emitting photoelectrons from the opposite surface to the incident surface in response to light incidence and a back-incidence FT-CCD (11) provided with an incidence surface in the traveling path of photoelectrons emitted. The number of pixels in the vertical direction of an imaging section (11a) of the FT-CCD (11) is equal to or more than the number of output scanning lines. A negative voltage is always applied to the transfer electrode of the imaging section (11a) during the image storage period. Consequently, the dark current is suppressed, the S/N ratio is improved, the resolution is maintained, and the sensitivity is also improved.