发明名称 ADDRESS DECODING DEVICE FOR SEMICONDUCTOR MEMORY
摘要 <p>PROBLEM TO BE SOLVED: To improve a dead-access time by shortening the time needed to secure operation up to the enabling of a decoder after an address is applied. SOLUTION: This address decoding device includes an address latch 32 which receives address signals Ai and Aj and generates an effective address RAij in response an internal clock PCLK and an active instruction PRA, a predecoder 34 which predecodes the effective address RAij from the address latch 32 and outputs the predecoded address DRAij, and a main decoder 36 which receives the predecoded address DRAij assigned by banks, performs main decoding and sufficiently boosts the voltage, and drives a word line with the boosted voltage. The predecoder 34 is enabled before an effective row address is generated by the address latch. The predecoder 34 is disabled right after the decoded address DRAij is generated and the effective row address DRAij is reset after the predecoder 34 is disabled.</p>
申请公布号 JPH11195294(A) 申请公布日期 1999.07.21
申请号 JP19980251389 申请日期 1998.09.04
申请人 SAMSUNG ELECTRON CO LTD 发明人 BAE YOTETSU
分类号 G11C11/413;G11C8/10;G11C11/407;G11C11/408;(IPC1-7):G11C11/408 主分类号 G11C11/413
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